? 2013 ixys corporation, all rights reserved xpt tm 600v igbts genx3 tm IXXK200N60B3 ixxx200n60b3 v ces = 600v i c110 = 200a v ce(sat) 1.7v t fi(typ) = 110ns symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 380 a i lrms leads current limit 160 a i c110 t c = 110c 200 a i cm t c = 25c, 1ms 900 a i a t c = 25c 100 a e as t c = 25c 1 j ssoa v ge = 15v, t vj = 150c, r g = 1 i cm = 400 a (rbsoa) clamped inductive load @v ce v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 10 , non repetitive p c t c = 25c 1630 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g ds100372a(02/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 150 c 3 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.40 1.70 v t j = 150 c 1.58 v g = gate e = emitter c = collector tab = collector to-264 (ixxk) e g c plus247 (ixxx) g tab tab e c g features z international standard packages z optimized for 10-30khz switching z square rbsoa z avalanche rated z short circuit capability z high current handling capability advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts extreme light punch through igbt for 10-30khz switching preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXK200N60B3 ixxx200n60b3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 27 45 s c ie s 9970 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 570 pf c res 183 pf q g(on) 315 nc q ge i c = 200a, v ge = 15v, v ce = 0.5 ? v ces 98 nc q gc 130 nc t d(on) 48 ns t ri 100 ns e on 2.85 mj t d(off) 160 ns t fi 110 ns e of f 2.90 4.40 mj t d(on) 46 ns t ri 94 ns e on 4.40 mj t d(off) 180 ns t fi 215 ns e off 3.45 mj r thjc 0.092 c/w r thcs 0.15 c/w notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 100a, v ge = 15v v ce = 360v, r g = 1 note 2 inductive load, t j = 25c i c = 100a, v ge = 15v v ce = 360v, r g = 1 note 2 to-264 outline terminals: 1 = gate 2,4 = collector 3 = emitter terminals: 1 - gate 2 - collector 3 - emitter plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXXK200N60B3 ixxx200n60b3 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 9v 6v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 02468101214 v ce - volts i c - amperes v ge = 15v 13v 10v 11v 12v 8v 7v 9v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 8v 9v 7v 5v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 150a i c = 200a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 200 a t j = 25oc 100 a 150 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXK200N60B3 ixxx200n60b3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc, 25oc, 150oc fig. 10. reverse-bias safe operating area 0 100 200 300 400 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 1 ? dv / dt < 10v / ns fig. 12. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 320 q g - nanocoulombs v ge - volts v ce = 300v i c = 200a i g = 10ma fig. 9. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 1ms 10ms v ce(sat) limit dc 100s external lead limit 25s
? 2013 ixys corporation, all rights reserved IXXK200N60B3 ixxx200n60b3 fig. 13. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 12345678910 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 360v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 160 200 240 280 320 360 12345678910 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 1.5 2.0 2.5 3.0 3.5 4.0 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 360v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 60 100 140 180 220 260 300 340 380 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 120 140 160 180 200 220 240 260 280 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 50 100 150 200 250 300 350 400 450 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 120 140 160 180 200 220 240 260 280 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 360v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXXK200N60B3 ixxx200n60b3 ixys ref: ixx_200n60b3(91)8-18-11 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 38 40 42 44 46 48 50 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 360v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 10 30 50 70 90 110 130 150 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 38 40 42 44 46 48 50 52 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 360v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 12345678910 r g - ohms t r i - nanoseconds 35 45 55 65 75 85 95 105 115 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 50a i c = 100a
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